SPEA DOT800T Power Semiconductor Tester

Power Module
Test Cell

AC/DC test and handling of IGBT modules

Key features


  • Market leader in mass production AC/DC test
  • Testing + in-line handling + contacting
  • 2500V, 1000A power test capabilities
  • Lowest parasitic inductance on the market
  • Low cost-of-ownership

High Power Test Capabilities

Power test instrumentation

  • 2 high-current sources: 1000 A pulsed or 20 A continuous
  • 1 high-voltage source: ±2500 V
  • high-voltage and high-current generators designed by SPEA
  • embedded CPUs for safety control and fast programming
  • clamp alarms, spike detector, automatic ramp generators

AC | DC test on single equipment

  • dual station for AC and DC test
  • programmable test sequence, with possibility to perform redundant test (e.g. DC-AC; DC-AC-DC…)
  • AC test ranges: 1000V/800A | 600V/1200A | 600V/30A

Lowest parasitic inductance

  • parasitic inductance <25nH: over-voltage is always lower than breakdown
  • connection length is minimized to avoid stray inductance

Automated In-Line Handling


  • SMEMA in-line integration
  • possibility to equip input/output conveyors and buffers
  • handling of every type of modules, with regular/irregular shape
  • handling direction and speed are programmable by software

Change the package in less than 10 minutes


Power Module Test Cells are complete of all the units required to interface and contact the devices:

  • products can be contacted from the top, bottom, or side
  • contacting module is fast to replace: package changeover requires less than 10 minutes

Test program generation & debug <1day


  • fast and guided test program generation
  • specific test model libraries for power modules
  • possibility to edit the parameters included in the test models, according to specific device requirements
  • recipe selection and editing: test flow can change “on the fly” to answer engineering and production requirements, without need for test program re-editing

Single Phase Bridge

Three Phase Bridge

Diode Rectifier

IGBT Module


High Voltage IGBT-MOSFET


Technical Data
AC TestDC Test
TdOn - Time delay on ON
nTdOff – Time delay on OFF
nTrise – Rise time
nTfall – Fall time
nEon – Energy ON
nEoff– Energy OFF
nQrr – Reverse recovered charge
nErec – Reverse recovery energy
nΔI/ΔTOn – On state Current slew rate
nΔI/ΔTOFF - Off state Current slew rate
nΔV/ΔTOn - On state voltage slew rate
nΔV/ΔTOff – Off state voltage slew rate
nVrr – Voltage reverse recovery
nIRM – Peak reverse recovery current
nTrr – Reverse recovery time
nIFRM – Repetitive peack forward current
nShort circuit test
NTC temistor check
nIGES – Gate Leakage current
nVGETh – Threshold voltage
nRgate Internal gate resistance
nCies - Gate – Emitter capacitance
nCres - Transconductance
nCoes – Output capacitance
nGate Charge (Qg)
nVBr – diode Breakdown test
nICES – Collector leakage current
nVF – Forward diode voltage
nVCESat – Saturation voltage
Design & Code by dsweb.lab