Key features
- Market leader in mass production AC/DC test
- Testing + in-line handling + contacting
- 2500V, 1000A power test capabilities
- Lowest parasitic inductance on the market
- Low cost-of-ownership
High Power Test Capabilities
Power test instrumentation
Power test instrumentation
- 2 high-current sources: 1000 A pulsed or 20 A continuous
- 1 high-voltage source: ±2500 V
- high-voltage and high-current generators designed by SPEA
- embedded CPUs for safety control and fast programming
- clamp alarms, spike detector, automatic ramp generators
AC | DC test on single equipment
AC | DC test on single equipment
- dual station for AC and DC test
- programmable test sequence, with possibility to perform redundant test (e.g. DC-AC; DC-AC-DC…)
- AC test ranges: 1000V/800A | 600V/1200A | 600V/30A
Lowest parasitic inductance
Lowest parasitic inductance
- parasitic inductance <25nH: over-voltage is always lower than breakdown
- connection length is minimized to avoid stray inductance
Automated In-Line Handling
- SMEMA in-line integration
- possibility to equip input/output conveyors and buffers
- handling of every type of modules, with regular/irregular shape
- handling direction and speed are programmable by software
Change the package in less than 10 minutes
Power Module Test Cells are complete of all the units required to interface and contact the devices:
- products can be contacted from the top, bottom, or side
- contacting module is fast to replace: package changeover requires less than 10 minutes
Test program generation & debug <1day
- fast and guided test program generation
- specific test model libraries for power modules
- possibility to edit the parameters included in the test models, according to specific device requirements
- recipe selection and editing: test flow can change “on the fly” to answer engineering and production requirements, without need for test program re-editing
Devices
Single Phase Bridge
Three Phase Bridge
Diode Rectifier
IGBT Module
Power MOSFET
High Voltage IGBT-MOSFET
Low Voltage IGBT-MOSFET
Technical Data
| AC Test | DC Test | |||
|---|---|---|---|---|
| TdOn - Time delay on ON nTdOff – Time delay on OFF nTrise – Rise time nTfall – Fall time nEon – Energy ON nEoff– Energy OFF nQrr – Reverse recovered charge nErec – Reverse recovery energy nΔI/ΔTOn – On state Current slew rate nΔI/ΔTOFF - Off state Current slew rate nΔV/ΔTOn - On state voltage slew rate nΔV/ΔTOff – Off state voltage slew rate nVrr – Voltage reverse recovery nRgate/Cgate nIRM – Peak reverse recovery current nTrr – Reverse recovery time nIFRM – Repetitive peack forward current nShort circuit test n | NTC temistor check nIGES – Gate Leakage current nVGETh – Threshold voltage nRgate Internal gate resistance nCies - Gate – Emitter capacitance nCres - Transconductance nCoes – Output capacitance nGate Charge (Qg) nVBr – diode Breakdown test nICES – Collector leakage current nRgate/Cgate nVF – Forward diode voltage nVCESat – Saturation voltage n |
