With DOT800T, SPEA provides a complete solution for power testing, combining in a single machine all the resources to perform ISO, AC, DC tests on the whole range of power applications, from wafer level to final product test.
DOT800T addresses the test requirements of traditional Silicon devices as well as new Gallium Nitride and Silicon Carbide technologies, covering their performance range with the highest voltage and current source capabilities, high frequency and low current measurement capabilities.
The correct device operation is verified under actual working conditions with complete and accurate dynamic tests, static test and isolation test sequences, to guarantee the quality and reliability of every device.
All of this, in a high-throughput, modular and configurable tester, designed for mass-production environments.
A single platform for the whole range
of power applications
Wafers
Complete test of power devices at wafer level, to improve yield reducing costs for next manufacturing steps.
KGD
Complete test of singulated dies from film frame, to certify Known Good Dies performance.
Discrete
Complete test of discrete devices, based on Si/SiC/GaN technologies.
IPM
Complete test of IGBT and driver components of Intelligent Power Modules.
DBC
Complete test of direct bonded copper substrates, before module assembly.
Module
Complete test of packaged IGBT modules, under actual working conditions.
One tester, 6 test stations
DOT800T is based on a multi-core architecture: the tester can be equipped with one to six independent and configurable test cores, to perform ISO test, AC test and DC test on dedicated stations, each of which with a dedicated independent controller. With a single system, you get the power and performance of six powerful testers.
Each core can be assigned to AC, DC or ISO test stations according to the specific test requirement and operation flow. The configuration is scalable and upgradeable in the field, so to adapt the tester setup to different device requirements.
The different test programs are performed in a true parallel, asynchronous mode, since each test core controller manages test resources, instrument connections, and test program execution.
The best resources for power test
DOT800T features a set of state-of-the-art, specialized instruments for power semiconductor test, designed to ensure performance and reliability of the new-generation wide bandgap technologies, supporting high voltages, high currents, high power, and high switching frequencies.
High voltage and current can be supplied simultaneously in testing, while great current measurement sensitivity and high-frequency built-in digitizers guarantee the best resolution and accuracy in leakage and breakdown measurements.
Local set-up memory for on-module set-up change and embedded macros to generate ramps and triggers ensures short test time.
System wide hardware synchronization between modules, and embedded alarms on high voltage and high current modules (e.g. Over temp, over current, floating, Kelvin, …) are at the basis of safe and reliable mixed mode tester operations.
ISO Test Resource
- up to 20kV/5mA DC
- up to 10kV/20mA AC
- High-voltage safety switches with output matrix to limit the discharge current, ensuring safe tester operation in every condition
AC Test Resources
- Up to 7kV, up to 3kA
- I Short Circuit Test up to 10kA
- Up to 8 independent programmable gate drivers
- 2 to 8 multiple pulses
- 10GS/s Sample rate digitizers
DC Test Resources
- Medium Power V/I Source (±100V, ±2A, gangable up to 16A) with 8 drivers and 8 digitizers totally floating and independent
- High-Voltage Generators up to 20kV
- High-Current Generators up to 4kA pulsed, with automatic ramp generators for test time reduction
Stray inductance <25nH including socket
Dynamic test of high-power, high-frequency devices does not only require instrumentation performances, but also a careful design of tester connection layout, sockets and contactors, to guarantee low stray inductance along the whole signal path, so as to minimize voltage overshoots during commutation. SPEA can provide the complete test solution, with contact units that are developed and manufactured by SPEA to guarantee ease of use, performance, and lowest stray inductance, for both industry-standard and custom packages, for ambient, dual-temp or tri-temperature test.
For wafer KGD and IGBT modules, SPEA also provides complete test cells incorporating robotic automatic handling, suitable to be directly integrated in the production line.
Best usability
ATOS C2 Operating Software provides all the resources for programming, debugging and test execution, featuring best usability with a set of tools for production mode.
Test program generation and debug <1 day
- Codeless development, with software libraries already implemented
- Plot for visual comparison of waveforms from the different sections of the device under test (e.g. single-phase, 3-phase, multi-stage MOSFETs and IGBTs)
- On-board acquisition memory for V/I monitoring on all modules
- Possibility to edit every single parameter included in the test models
- Test flow can change “on the fly”, with no need for test program re-editing
Performed Test
| ISO Test | AC Test | DC Test | ||||
|---|---|---|---|---|---|---|
| Pins Plate Voltage/Current | TdOn - Time delay on ON | NTC temistor check | ||||
| IGBT NTC Voltage/Current | TdOff – Time delay on OFF | IGES – Gate Leakage current | ||||
| NTC Plate Voltage/Current | Trise – Rise time | VGETh – Threshold voltage | ||||
| Tfall – Fall time | Rgate Internal gate resistance | |||||
| Eon – Energy ON | Cies - Gate – Emitter capacitance | |||||
| Eoff– Energy OFF | Cres - Reverse Transfer Capacitance | |||||
| Qrr – Reverse recovered charge | Coes – Output capacitance | |||||
| Erec – Reverse recovery energy | Gate Charge (Qg) | |||||
| ΔI/ΔTOn – On state Current slew rate | VBr – diode Breakdown test | |||||
| ΔI/ΔTOFF - Off state Current slew rate | ICES – Collector leakage current | |||||
| ΔV/ΔTOn - On state voltage slew rate | VF – Forward diode voltage | |||||
| ΔV/ΔTOff – Off state voltage slew rate | VCESat – Saturation voltage | |||||
| Vrr – Voltage reverse recovery | BVDS - Breakdown Voltage | |||||
| IRM – Peak reverse recovery current | Kelvin | |||||
| Trr – Reverse recovery time | RDSON | |||||
| IFRM – Repetitive peak forward current | Dynamic RDSON | |||||
| Short circuit test | Avalanche / UIL |
